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| (R) BAR 18 BAS 70-04 06 SMALL SIGNAL SCHOTTKY DIODES K N.C. A A1 K2 K1 A2 BAR18 BAS70-04 K A1 A K1 DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. A2 K2 BAS70-05 SOT-23 (Plastic) BAS70-06 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Ptot Tstg Tj TL Parameter Value 70 15 Unit V mA mW C C C Repetitive peak reverse voltage Continuous forward current Power dissipation (note 1) Maximum storage temperature range Maximum operating junction temperature * Maximum temperature for soldering during 10s Tamb = 25C 250 - 65 to +150 150 260 Note 1: for double diodes, Ptot is the total dissipation of both diodes *: 1 dPtot thermal runaway condition for a diode on its own heatsink < dTj Rth(j-a) THERMAL RESISTANCE Symbol R th (j-a) Parameter Value 500 Unit C/W Junction to ambient (*) (*) Mounted on epoxy board with recommended pad layout. June 1999 - Ed: 2A 1/4 BAR 18/BAS 70-04 06 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol V BR VF * IR ** Pulse test: Test Conditions Tj = 25CIR = 10A Tj = 25CIF = 1mA Tj = 25CVR = 50V * tp = 380s, < 2% ** tp = 5 ms, < 2% Min. 70 Typ. Max. Unit V 410 200 mV nA DYNAMIC CHARACTERISTICS Symbol C * Tj = 25CVR = 0V Tj = 25CIF = 5mA Test Conditions F = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps * Effective carrier life time. Fig. 1-1: Forward voltage drop versus forward current (low level). IFM(A) 2.0E-2 1.8E-2 1.6E-2 1.4E-2 1.2E-2 1.0E-2 8.0E-3 6.0E-3 4.0E-3 2.0E-3 0.0E+0 0.0 Fig. 1-2: Forward voltage drop versus forward current (high level). IFM(A) 7E-2 Tj=100C Typical values Tj=100C Typical values 1E-2 Tj=25C Maximum values Tj=25C Maximum values Tj=25C Typical values 1E-3 Tj=25C Typical values VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 VFM(V) 1E-4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 2: Reverse leakage current versus reverse voltage applied (typical values). IR(A) 1E+1 Tj=100C Fig. 3: Reverse leakage current versus junction temperature (typical values). IR(A) 5E+2 1E+2 VR=70V 1E+0 1E+1 1E-1 Tj=25C 1E+0 1E-1 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Tj(C) 1E-2 0 25 50 75 100 125 150 2/4 BAR 18/BAS 70-04 06 Fi g. 4: Junction capacitance versus reverse voltage applied (typical values). Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (alumine substrate 10mm*8mm*0.5mm). C(pF) 2.0 1.0 F=1MHz Tj=25C Zth(j-a)/Rth(j-a) 1.00 = 0.5 = 0.2 0.10 = 0.1 T 0.1 VR(V) 1 10 100 Single pulse tp(s) 1E-2 1E-1 1E+0 =tp/T tp 0.01 1E-3 1E+1 1E+2 Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit boardFR4, copper thickness:35m). Rth(j-a) (C/W) 350 300 250 200 S(Cu) (mm ) 150 0 5 10 15 20 25 30 35 40 45 50 P=0.25W 3/4 BAR 18/BAS 70-04 06 PACKAGE MECHANICAL DATA SOT 23 (Plastic) E A DIMENSIONS REF. A Millimeters Min. Max. 1.4 0.1 0.51 0.18 3.04 1.05 2.1 1.6 2.75 0.6 typ. 0.35 0.65 0.89 0 0.3 0.085 2.75 0.85 1.7 1.2 2.1 Inches Min. 0.035 0 0.012 0.003 0.108 0.033 0.067 0.047 0.083 0.014 Max. 0.055 0.004 0.02 0.007 0.12 0.041 0.083 0.063 0.108 0.026 e B e1 D A1 B c S A1 D e e1 L E H L S c H 0.024 typ. FOOT PRINT DIMENSIONS 0.9 0.035 0.9 0.035 1.1 0.043 2.35 0.92 1.9 0.075 1.45 0.037 1.1 0.043 mm inch 0.9 0.035 Ordering type BAR18 BAS70-04 BAS70-05 BAS70-06 Marking D76 D96 D97 D98 Package SOT-23 SOT-23 SOT-23 SOT-23 Weight 0.01g 0.01g 0.01g 0.01g Base qty 3000 3000 3000 3000 Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorizedfor use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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